| PART |
Description |
Maker |
| GS72116J-15 GS72116U-15I GS72116TP-15I GS72116J-8I |
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
GSI Technology, Inc.
|
| CY7C1018BV33-15VC CY7C1018BV33L-12VC CY7C1018BV33- |
128K x 8 static RAM, 12ns
Memory : Async SRAMs
128K x 8 static RAM, 15ns
|
CYPRESS[Cypress Semiconductor]
CYPRESS SEMICONDUCTOR CORP
|
| CG6263AM |
2Mb (128K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| N02L63W2AB25I N02L63W2AT5I N02L63W2AT5IT N02L63W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
|
ON Semiconductor
|
| N02L1618C1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS72116AJ GS72116AJ-10 GS72116AJ-10I GS72116AJ-12 |
8ns 128K x 16 2Mb asynchronous SRAM
ACB 9C 9#16 SKT RECP WALL
ACB 5C 5#16S SKT RECP WALL
ACB 10C 10#16 PIN RECP WALL
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum Alloy; Series:ACA-B Reverse Bayonet; No. of Contacts:2; Connector Shell Size:12S; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
128K x 16 2Mb Asynchronous SRAM 128K的16异步SRAMMb
ACB 19C 19#16 SKT RECP WALL 128K的16异步SRAMMb
ACB 4C 4#16 SKT RECP WALL 128K的16异步SRAMMb
ACB 8C 8#16 SKT RECP WALL 128K的16异步SRAMMb
|
http://
ETC[ETC]
GSI Technology
Electronic Theatre Controls, Inc.
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
|
| CY7C1019CV33 CY7C1019CV33-12VI CY7C1019CV33-15VC C |
128K x 8 Static RAM 128K的8静态RAM
JT 26C 26#20 SKT RECP 128K X 8 STANDARD SRAM, 8 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C331 |
Sync SRAM - 3.3V
LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 4 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 4 ns, PQFP100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 3.3 128K的X 32/36管道爆裂同步SRAM
|
Alliance Semiconductor Corp...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
